III-V Technology (Shenzhen) Co., Ltd. is a HI-TECH company specializing in R & D, production as well as sales of fiber optical transceivers,founded in 2016. The company inherits the meticulous spirit of traditional technology companies, integrates into today's advanced automatic production mode.We also has made great achievements in the field of optical communication, aiming to make a greater breakthrough in the industry of 5G networks.
IIIV Technology (Shenzhen) Co., Ltd. has functional Depts such as R & D department, engineering department, sales department and production department.Based on this,We are with a strong ability of designing, independent R & D as well as production capacity.What's more ,we provide customers with full series of optical module project schemes. At the same time, the company undertakes OEM and ODM to solve the problems faced by customers in project and product sales .More realistically and flexibly.
With the development of the company, we have our own brand "IIIV". What we have are :
Low speed optical modules:
155M, 1.25G, 2.5G, 3.125G, 4G, 8G, 10G (SFP, SFP +, X2, xenpak), single dual fiber, single multimode products, CWDM / DWDM wavelength division multiplexing products, etc.
Medium and high speed optical modules:
16G, 25gG 32G, 40G (SFP +, sfp28, qsfp +), single dual fiber, single multimode products.
High speed optical modules:
56G, 100G (sfp56, qsfp28, CFP, cfp2, cfp4), single dual fiber, single multimode products.
AOC high speed active optical cables:
10G, 25G, 40G, 56G, 100G, 200G, 400G AOC (active optical cable), supporting various length requirements.
DAC high speed passive cabless:
10G, 25G, 40G, 56G, 100G, 200G, 400G DAC (direct attached cable), supporting various length requirements.
Electrical modules(Copper transceivers):
1000M, 10/100/1000M, 10G electric copper transceivers.
Our aim is: To be professional,create more possibilities for our customers.
With the reliable products,good pre-sales and after-sales service, IIIV has won the recognition of our customers. Product applications cover network construction, public transportation, electric power, military industry, numerical control, aerospace and other scientific and technological fields.We have become the designated supplier of customer's projects for many years.
Our advantages:
1、 We test every single optical module product according to the exact specifications of the customer's environment, and the reliability rating is around 99.9%. IIIV's products comply with CE, FCC, RoHS and ISO9001 standards, and are originated in Shenzhen, China.
2、 IIIV is committed to providing high-quality products with competitive prices, which can save 70% of the cost or more compared with friends in the market.
3、 365 days / 7 days / 24 hours support. Our customers are all over the world. Our professional R & D and sales team can deal with various problems from customers in the shortest time.
4、 All optical modules of IIIV can be re-programmed at customer's side, which can effectively save time and cost.
5、 Sufficient inventory and efficient production escort your needs.
6、 Our company only cooperates with well-known companies of express in order to guard your shipping well.
IIIV technology Co.,Ltd seeks to make mutual benefits cooperation with customers from all over the world.Join us now!
III-V group compounds free edit add sense name
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Group III-V compounds are the compounds formed by group III B, Al, GA, in and group V n, P, as, Sb in the periodic table, mainly including arsenic gallide (GaAs), indium phosphide (INP) and gallium nitride.
essential information
Chinese name
III-V compounds
definition
Compounds of group III and group V in the periodic table of elements
It mainly includes
Arsenic gallide (GaAs), indium phosphide (INP)
application
Optoelectronic devices, optoelectronic integration
Expression
A(III)B(V)
catalog
1 Definition
2 Introduction
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The so-called III-V compounds are compounds formed by B, Al, GA, in of group III and N, P, as, sb of group V in the periodic table of elements, mainly including arsenic gallide (GaAs), indium phosphide (INP) and gallium nitride.
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The formula of group III-V compounds is a (III) B (V),BN,BP,BAs,BSb,AlN,AlP,AlAs,AlSb,GaN,GaP,GaAs,GaSb,InAs,InN,InP,InSb。BN, AlN, Gan and inn are fibrous zinc ore structures, and the other 12 are sphalerite structures. These materials have zincblende structure. The bond mode is mainly covalent bond. Because the pentavalent atom has higher negative electric property than the trivalent atom, there are a little ion bond components. Because of this, the lattice is easily polarized when the III-V group materials are placed in the electric field. The ion displacement helps to increase the dielectric coefficient if the electric field frequency is in the infrared range. In n-type semiconductor of GaAs, the electron mobility rate ((mn-8500) is much higher than that of Si (mn-1450), so it is faster in motion and is superior to Si semiconductor in application in high-speed digital integrated circuits. However, the fabrication process of GaAs integrated circuit is very complex, the cost is also more expensive, and the defect rate of the finished product is high, and the single crystal defect is more than Si. Therefore, GaAs needs to be developed and developed in order to be as popular as Si semiconductor. On the other hand, the advantages of the system are that it can emit laser and other characteristics that silicon does not have at present.
One of the III-V compounds is the dissociation of C group V elements, and the dissociation of phosphide is the highest. There are several methods to prepare III-V semiconductor compounds: liquid sealed Czochralski method (LEC), high pressure liquid sealed Czochralski method (hplec), horizontal zone melting method (HB) and vertical gradient solidification method (VGF). Thin films are prepared by liquid phase epitaxy (LPE), vapor phase epitaxy (VPE), molecular beam epitaxy (MBE), chemical beam epitaxy (LBE) and metal organic chemical vapor deposition (MOCVD). III-V compound semiconductor materials are widely used in optoelectronic devices, optoelectronic integration, ultra high speed microelectronic devices and ultra high frequency microwave devices and circuits.
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